Performance Analysis of a 1200 V SiC MOSFET Based 10 kVA Voltage Source Inverter
نویسندگان
چکیده
Silicon carbide (SiC) MOSFET has the potential to replace silicon (Si) IGBT due to its superior switching performance. However due to presence of parasitic inductance in converter layout, device voltage and current experience overshoots and oscillations during device switching. These undesired overshoots increase switching loss. In the context of these parasitic inductances, the performance of an equivalent Si IGBT and SiC MOSFET based 10 kVA converter has been compared in this paper. Variation of switching loss with switching frequency at different parasitic inductances have been reported. A 10 kVA SiC MOSFET based voltage source inverter has been designed and its performance has been analyzed by driving
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